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? 20 0267(&+ semiconductor corporation 07$ rev $ 1 ( ( ) 07$ dual 30 p-channel power mosfet general description this p-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers, and battery chargers. these mosfets feature faster switching and lower gate charge than other mosfets with comparable r ds(on) specifications. the result is a mosfet that is easy and safer to drive (even at very high frequencies), and dc/dc power supply designs with higher overall efficiency. features x ? 5 .9 a, ?30 v. r ds(on) = m: @ v gs = ?10 v r ds(on) = m: @ v gs = ? 4.5 v x extended v gss range (?25v) for battery applications x esd protection diode (note 3) x high performance trench technology for extremely low r ds(on) x high power and current handling capability s d s s so-8 d d d g d2 d2 d1 d1 s2 g2 s1 g1 pin 1 so-8 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v ds\ drain-source voltage ?30 v v gs gate-source voltage + 25 v i d drain current ? continuous (note 1a) ? .9 a ? pulsed ?50 power dissipation for single operation (note 1a) 1.6 (note 1b) 1.0 p d (note 1c) 0.9 w t j , t stg operating and storage junction temperature range ?55 to +150 q c thermal characteristics r t ja thermal resistance, junction-to-ambient (note 1a) 78 q c/w r t jc thermal resistance, junction-to-case (note 1) 40 q c/w package marking and ordering information device marking device reel size tape width quantity 07$07$ 13?? 12mm 2500 units 4 3 2 1 5 6 7 8 q1 q2 07$ sep 20 mos-tech semiconductor co.,ltd www.datasheet.co.kr datasheet pdf - http://www..net/
07$ rev $ 1 (( ) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 p a ?30 v ' bv dss ' t j breakdown voltage temperature coefficient i d = ?250 p a,referenced to 25 q c 24 mv/ q c i dss zero gate voltage drain current v ds = ?24 v, v gs = 0 v ?1 p a i gss gate?body leakage v gs = + 25 v, v ds = 0 v + 10 p a on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 p a ? ? ? v ' v gs(th) ' t j gate threshold voltage temperature coefficient i d = ?250 p a,referenced to 25 q c ?5 mv/ q c g fs forward transconductance v ds = ?5 v, i d = ? .9 a 22 s dynamic characteristics c iss input capacitance 1360 pf c oss output capacitance 240 pf c rss reverse transfer capacitance v ds = ?15 v, v gs = 0 v, f = 1.0 mhz 200 pf switching characteristics (note 2) t d(on) turn?on delay time 12 22 ns t r turn?on rise time 13 23 ns t d(off) turn?off delay time 68 108 ns t f turn?off fall time v dd = ?15 v, i d = ?1 a, v gs = ?10 v, r gen = 6 : 38 61 ns q g(tot) total gate charge, v gs = 10v 29 40 nc q g(tot) total gate charge, v gs = 5v 16 23 nc q gs gate?source charge 4 nc q gd gate?drain charge v ds = ?15 v, i d = ?.9 a, v gs = ?10 v 7 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?2.1 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?2.1 a (note 2) ?0.8 ?1.2 v t rr reverse recovery time 24 ns q rr reverse recovery charge i f = ?.8 a, d if /d t = 100 a/s (note 2) 9 nc notes: 1. r t ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r t jc is guaranteed by design while r t ca is determined by the user's board design. a) 78c/w steady state when mounted on a 1in 2 pad of 2 oz copper b) 125c/w when mounted on a .04 in 2 pad of 2 oz copper c) 135c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 p s, duty cycle < 2.0% 3. the diode connected between the gate and source serves only as protection against esd. no gate over voltage rating is implied. 07$ r ds(on) static drain?source on?resistance v gs = ?10 v, i d = ?5 a v gs = ?4.5 v, i d = ?3.3 a v gs = ?10 v, i d = ?5 a , t j =125 c 4 70 63 5 5 85 m w www.datasheet.co.kr datasheet pdf - http://www..net/
07$ rev $ 1 (( ) typical characteristics 0 10 20 30 40 50 01234 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -10v -5.0v -3.5v -6.0v -4.5v -4.0v -3.0v 0.6 1 1.4 1.8 2.2 2.6 3 0 1020304050 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = -3.5v -4.5v -10v -5.0v -8.0v -6.0v -4.0v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = - .8a v gs = -10v 0 0.02 0.04 0.06 0.08 24681 0 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -4.4a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 50 22.533.544.55 -v gs , gate to source voltage (v) -i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = -5v 0.001 0.01 0.1 1 10 100 00 . 40 . 81 . 21 . 6 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. 07$ www.datasheet.co.kr datasheet pdf - http://www..net/
07$ rev $ 1 (( ) typical characteristics 0 2 4 6 8 10 0 6 12 18 24 30 36 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = - .8a v ds = -10v -20v -15v 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge character istics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 1s 100ms 100 p s r ds(on) limit v gs = -10v single pulse r t ja = 125 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r t ja = 125c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r t ja (t) = r(t) * r t ja r t ja = 125 o c/w t j - t a = p * r t ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. 07$ www.datasheet.co.kr datasheet pdf - http://www..net/
1. this document is provided for reference purposes only so that mos-tech customers may select the appropriate mos-tech products for their use. mos-tech neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of mos-tech or any third party with respect to the information in this document. 2. mos-tech shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. you should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. when exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. all information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any mos-tech products listed in this document, please confirm the latest product information with a mos-tech sales office. also, please pay regular and careful attention to additional and different information to be disclosed by mos-tech such as that disclosed through our website. (http://www.mtsemi.com ) 5. mos-tech has used reasonable care in compiling the information included in this document, but mos-tech assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. when using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. mos-tech makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or mos-tech products. 7. with the exception of products specified by mos-tech as suitable for automobile applications, mos-tech products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. if you are considering the use of our products for such purposes, please contact a mos-tech sales office beforehand. mos-tech shall have no liability for damages arising out of the uses set forth above. 8. notwithstanding the preceding paragraph, you should not use mos-tech products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life mos-tech shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use mos-tech products in any of the foregoing applications shall indemnify and hold harmless mos-tech technology corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. you should use the products described herein within the range specified by mos-tech, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. mos-tech shall have no liability for malfunctions or damages arising out of the use of mos-tech products beyond such specified ranges. 10. although mos-tech endeavors to improve the quality and reliability of its products, ic products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a mos-tech product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. in case mos-tech products listed in this document are detached from the products to which the mos-tech products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. you should implement safety measures so that mos-tech products may not be easily detached from your products. mos-techshall have no liability for damages arising out of such detachment. 12. this document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from mos-tech. 13. please contact a mos-tech sales office if you have any questions regarding the information contained in this document, mos-tech semiconductor products, or if you have any other inquiries. notes regarding these materials mos-tech semiconductor co.,ltd ?2010 mos-tech semiconductor corporation www.mtsemi.com www.datasheet.co.kr datasheet pdf - http://www..net/
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|a?? gby*cm,x"??_nm "?? [ ? ?5a[!nieq8?[(?cautions? ky!7?o? ?2010 mos-tech semiconductor corporation www.mtsemi.com mos-tech semiconductor co.,ltd 1. mos-tech semiconductor corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. keep safety first in your circuit designs! www.datasheet.co.kr datasheet pdf - http://www..net/

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